Shamim, Md Hosne Mobarok; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa(Optics Letters, The Optical Society, 2018-10-08)[Article]
We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10–528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.
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