Al-Halafi, Abdullah; Oubei, Hassan M.; Ooi, Boon S.; Shihada, Basem(Journal of Optical Communications and Networking, The Optical Society, 2017-09-13)[Article]
We experimentally demonstrate high-quality real-time video streaming over an underwater wireless optical communication (UWOC) link up to 5 m distance using phase-shift keying (PSK) modulation and quadrature amplitude modulation (QAM) schemes. The communication system uses software defined platforms connected to a commercial TO-9 packaged pigtailed 520 nm directly modulated laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. To simulate various underwater channels, we perform laboratory experiments on clear, coastal, harbor I, and harbor II ocean water types. The measured bit error rates of the received video streams are 1.0×10−9 for QPSK, 4-QAM, and 8-QAM and 9.9×10−9 for 8-PSK. We further evaluate the quality of the received live video images using structural similarity and achieve values of about 0.9 for the first three water types, and about 0.7 for harbor II. To the best of our knowledge, these results present the highest quality video streaming ever achieved in UWOC systems that resemble communication channels in real ocean water environments.
Tangi, Malleswararao; Mishra, Pawan; Tseng, Chien-Chih; Ng, Tien Khee; Hedhili, Mohamed N.; Anjum, Dalaver H.; Alias, Mohd Sharizal; Wei, Nini; Li, Lain-Jong; Ooi, Boon S.(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2017-02-21)[Article]
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
Hanna, Amir Nabil; Kutbee, Arwa Talal; Subedi, Ram Chandra; Ooi, Boon S.; Hussain, Muhammad Mustafa(Small, Wiley, 2017-11-13)[Article]
A novel wavy-shaped thin-film-transistor (TFT) architecture, capable of achieving 70% higher drive current per unit chip area when compared with planar conventional TFT architectures, is reported for flexible display application. The transistor, due to its atypical architecture, does not alter the turn-on voltage or the OFF current values, leading to higher performance without compromising static power consumption. The concept behind this architecture is expanding the transistor's width vertically through grooved trenches in a structural layer deposited on a flexible substrate. Operation of zinc oxide (ZnO)-based TFTs is shown down to a bending radius of 5 mm with no degradation in the electrical performance or cracks in the gate stack. Finally, flexible low-power LEDs driven by the respective currents of the novel wavy, and conventional coplanar architectures are demonstrated, where the novel architecture is able to drive the LED at 2 × the output power, 3 versus 1.5 mW, which demonstrates the potential use for ultrahigh resolution displays in an area efficient manner.
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