Priante, Davide; Dursun, Ibrahim; Alias, M. S.; Shi, Dong; Melnikov, V. A.; Ng, Tien Khee; Mohammed, Omar F.; Bakr, Osman; Ooi, Boon S.(Applied Physics Letters, AIP Publishing, 2015-02-23)[Article]
We investigated the mechanisms of radiative recombination in a CH3NH3PbBr3 hybrid perovskite material using low-temperature, power-dependent (77K), and temperature-dependent photoluminescence (PL) measurements. Two bound-excitonic radiative transitions related to grain size inhomogeneity were identified. Both transitions led to PL spectra broadening as a result of concurrent blue and red shifts of these excitonic peaks. The red-shifted bound-excitonic peak dominated at high PL excitation led to a true-green wavelength of 553nm for CH3NH3PbBr3 powders that are encapsulated in polydimethylsiloxane. Amplified spontaneous emission was eventually achieved for an excitation threshold energy of approximately 350μJ/cm2. Our results provide a platform for potential extension towards a true-green light-emitting device for solid-state lighting and display applications.
Majid, Mohammed Abdul; Al-Jabr, Ahmad; Oubei, Hassan M.; Alias, Mohd Sharizal; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.(Electronics Letters, Institution of Engineering and Technology (IET), 2015-06-26)[Article]
The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
Shen, Chao; Ng, Tien Khee; Lee, Changmin; Leonard, John T.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.(Gallium Nitride Materials and Devices XII, SPIE, 2017-02-16)[Conference Paper]
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
Dursun, Ibrahim; Shen, Chao; Parida, Manas R.; Pan, Jun; Sarmah, Smritakshi P.; Priante, Davide; AlYami, Noktan Mohammed; Liu, Jiakai; Saidaminov, Makhsud I.; Alias, Mohd Sharizal; Abdelhady, Ahmed L.; Ng, Tien Khee; Mohammed, Omar F.; Ooi, Boon S.; Bakr, Osman(ACS Photonics, American Chemical Society (ACS), 2016-05-31)[Article]
Visible light communication (VLC) is an emerging technology that uses light-emitting diodes (LEDs) or laser diodes for simultaneous illumination and data communication. This technology is envisioned to be a major part of the solution to the current bottlenecks in data and wireless communication. However, the conventional lighting phosphors that are typically integrated with LEDs have limited modulation bandwidth and thus cannot provide the bandwidth required to realize the potential of VLC. In this work, we present a promising light converter for VLC by designing solution-processed CsPbBr3 perovskite nanocrystals (NCs) with a conventional red phosphor. The fabricated CsPbBr3 NCs phosphor-based white light converter exhibits an unprecedented modulation bandwidth of 491 MHz, which is ~ 40 times greater than that of conventional phosphors, and the capability to transmit a high data rate of up to 2 Gbit/s. Moreover, this perovskite enhanced white light source combines ultrafast response characteristics with a high color rendering index of 89 and a low correlated color temperature of 3236 K, thereby enabling dual VLC and solid-state lighting functionalities.
Lee, It Ee; Guo, Yong; Ng, Tien Khee; Park, Kihong; Alouini, Mohamed-Slim; Ooi, Boon S.(Conference on Lasers and Electro-Optics, OSA, 2017-05-08)[Conference Paper]
We demonstrate a gigabit near-infrared-based underwater wireless optical communication link using an 808-nm laser diode to mitigate the particle scattering effect in turbid medium. An improvement in the error performance is observed with increasing concentrations.
Sun, Xiaobin; Cai, Wenqi; Alkhazragi, Omar; Ooi, Ee-Ning; He, Hongsen; Chaaban, Anas; Shen, Chao; Oubei, Hassan M.; Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Alouini, Mohamed-Slim; Ooi, Boon S.(Optics Express, The Optical Society, 2018-05-04)[Article]
For circumventing the alignment requirement of line-of-sight (LOS) underwater wireless optical communication (UWOC), we demonstrated a non-line-of-sight (NLOS) UWOC link adequately enhanced using ultraviolet (UV) 375-nm laser. Path loss was chosen as a figure-of-merit for link performance in this investigation, which considers the effects of geometries, water turbidity, and transmission wavelength. The experiments suggest that path loss decreases with smaller azimuth angles, higher water turbidity, and shorter wavelength due in part to enhanced scattering utilizing 375-nm radiation. We highlighted that it is feasible to extend the current findings for long distance NLOS UWOC link in turbid water, such as harbor water.
III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane. As a result, compared to conventional InGaN NWs on silicon, the fabricated free-standing flexible membranes showed a 10-fold increase in the generated photocurrent as well as a 0.8 V cathodic shift in the onset potential. Through electrochemical impedance spectroscopy, accompanied with TEM-based analysis, we further demonstrated the detailed enhancement within excess charge carrier dynamics of the photoanode membranes. This novel configuration in photoelectrodes demonstrates a novel pathway for enhancing the performance of III-nitrides photoelectrodes to accelerate their commercialization for solar water splitting.
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