Search
Now showing items 1-10 of 113
Extremely wide lasing bandwidth from InAs/InP quantumdash ridge-waveguide laser near 1.6 μm
(CLEO: 2013, The Optical Society, 2013) [Conference Paper]
We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics
Quantum Nanoantennas for Making Nonlinear and Self-Modulatable Metasurface
(CLEO: 2015, The Optical Society, 2015) [Conference Paper]
We investigate the plasmonic nanodipole antenna with sub-microscopic nanogap. Relevant quantum conductivities, including linear and nonlinear components, are observed due to the photon-assisted quantum tunneling, realizing optical nano-radiators with enhanced amplitude and frequency modulations. © 2015 OSA.
Blackbody metamaterial lasers
(CLEO: 2015, The Optical Society, 2015) [Conference Paper]
We investigate both theoretically and experimentally a new type of laser, which exploits a broadband light "condensation" process sustained by the stimulated amplification of an optical blackbody metamaterial. © 2014 Optical Society of America.
Femtosecond dynamics of a spaser and unidirectional emission from a perfectly spherical nanoparticle
(CLEO: 2015, The Optical Society, 2015) [Conference Paper]
We investigate the femtosecond dynamics of the spaser emission by combining ab-initio simulations and thermodynamic analysis. Interestingly, the emission is characterized by rotational evolution, opening to the generation of unidirectional emission from perfectly spherical nanoparticles. © OSA 2015.
Extreme localization of light with femtosecond subwavelength rogue waves
(CLEO: 2015, The Optical Society, 2015) [Conference Paper]
By using theory and experiments, we investigate a new mechanism based on spontaneous synchronization of random waves which generates ultrafast subwavelength rare events in integrated photonic chips. © 2014 Optical Society of America.
Generation of Graphene Surface Plasmons and Their Applications in Beam Steering
(CLEO: 2015, The Optical Society, 2015) [Conference Paper]
We propose a novel concept that uses mechanical and electronic properties of graphene to efficiently couple light to surface plasmon polaritons. A graphene-based infrared beam-former based on the concept of surface leaky-wave is also discussed. © OSA 2015.
Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate
(Asia Communications and Photonics Conference 2014, The Optical Society, 2014) [Conference Paper]
Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.
Increasing wavefunction overlap of carriers in an asymmetrically graded quantum well with polarizationeffect-band-engineering
(Renewable Energy and the Environment, The Optical Society, 2013) [Conference Paper]
A novel design based on an asymmetrically graded-well, Al(a→b)Ga(1-a→1-b) N / Al(c)Ga(1-c) N,where b>c>a, to enhance the optical matrix element of radiative transitions in an AlGaN based UV-LED, is theoretically studied.
Absence of quantized energy-states local diffusion in semiconductor quantum-dash structures
(Conference on Lasers and Electro-Optics 2010, The Optical Society, 2010) [Conference Paper]
We present an analysis of InAs/InAlGaAs/InP quantum-dash structures utilizing different degrees of postgrowth-lattice-disordering. The observation of digital transitions among quantized states discards the origins of multiple excited states from a single group of dash ensembles.
GaN nano-membrane for optoelectronic and electronic device applications
(Asia Communications and Photonics Conference 2014, The Optical Society, 2014) [Conference Paper]
The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.