First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm
AuthorsMajid, Mohammed Abdul
Oubei, Hassan M.
Alias, Mohd Sharizal
Anjum, Dalaver H.
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Advanced Nanofabrication, Imaging and Characterization Core Lab
Online Publication Date2015-06-26
Print Publication Date2015-07-09
Permanent link to this recordhttp://hdl.handle.net/10754/558571
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AbstractThe fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.
CitationFirst demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm 2015 Electronics Letters