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dc.contributor.authorWang, Lingfei
dc.contributor.authorLi, Yongfeng
dc.contributor.authorBera, Ashok
dc.contributor.authorMa, Chun
dc.contributor.authorJin, Feng
dc.contributor.authorYuan, Kaidi
dc.contributor.authorYin, Wanjian
dc.contributor.authorDavid, Adrian
dc.contributor.authorChen, Wei
dc.contributor.authorWu, Wenbin
dc.contributor.authorPrellier, Wilfrid
dc.contributor.authorWei, Suhuai
dc.contributor.authorWu, Tao
dc.date.accessioned2015-06-28T13:38:24Z
dc.date.available2015-06-28T13:38:24Z
dc.date.issued2015-06-22
dc.identifier.citationDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material 2015, 3 (6) Physical Review Applied
dc.identifier.issn2331-7019
dc.identifier.doi10.1103/PhysRevApplied.3.064015
dc.identifier.urihttp://hdl.handle.net/10754/558566
dc.description.abstractSearching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevApplied.3.064015
dc.rightsArchived with thanks to Physical Review Applied
dc.titleDevice Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalPhysical Review Applied
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People’s Republic of China
dc.contributor.institutionHefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, and High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230026, People’s Republic of China
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117543
dc.contributor.institutionNational Renewable Energy Laboratory, Golden, Colorado 80401, USA
dc.contributor.institutionLaboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, 14050 Caen, France
kaust.personWang, Lingfei
kaust.personBera, Ashok
kaust.personMa, Chun
kaust.personWu, Tao
refterms.dateFOA2018-06-14T08:00:02Z


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