Tak, B. R.; Garg, Manjari; Dewan, Sheetal; Torres-Castanedo, Carlos G.; Li, Kuang-Hui; Gupta, Vinay; Li, Xiaohang; Singh, R.(Journal of Applied Physics, AIP Publishing, 2019-04-08)[Article]
High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.
Sun, Haiding; Park, Young Jae; Li, Kuang-Hui; Liu, Xinwei; Detchprohm, Theeradetch; Zhang, Xixiang; Dupuis, Russell D.; Li, Xiaohang(Applied Surface Science, Elsevier BV, 2018-07-26)[Article]
Wurtzite BAlN alloy with large bandgap is an emerging material system for UV optoelectronic and power devices. In this study, the BAlN/GaN heterojunction with a sharp interface and uniform distribution of the elements was formed by careful control of epitaxial conditions to avoid GaN desorption and parasitic reactions whose band alignment was then measured for the first time. The valence band offset (VBO) was found to be nearly-zero, i.e. −0.2 ± 0.2 eV, in the B0.14Al0.86N/GaN heterojunction by X-ray photoelectron spectroscopy. Additionally, the conduction band offset (CBO) is estimated at 2.1 ± 0.2 eV, which is the largest reported CBO among epitaxial GaN-based heterojunctions. In comparison to the type-I Al0.75Ga0.25N/GaN heterojunction (both Al0.75Ga0.25N and B0.14Al0.86N alloy have the same bandgap of 5.7 eV), the CBO and VBO of the B0.14Al0.86N/GaN heterostructure are significantly larger and smaller, respectively. The nearly-zero VBO and the very large CBO of the B0.14Al0.86N/GaN heterojunction could potentially lead to considerable performance enhancement for GaN optoelectronics and power electronics devices.
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