Embodiments of the present disclosure describe a susceptor for chemical vapor deposition comprising a horizontal component with a top surface and a bottom surface, wherein the top surface is configured to support one or more wafers; a vertical component extending from the bottom surface of the horizontal component along a longitudinal axis that is substantially perpendicular to the horizontal component; and a hollow region within the vertical component. Embodiments of the present disclosure describe a susceptor for chemical vapor deposition comprising a horizontal plate with a top surface configured to support one or more wafers, a vertical rod integrated with and perpendicular to the horizontal plate, and a hollow region within the vertical rod for promoting temperature uniformity across the top surface of the horizontal plate.
A susceptor device for a chemical vapor deposition (CVD) reactor including metal organic CVD (MOCVD) used in the semiconductor industry. The susceptor device particularly is used with induction heating and includes a horizontal plate adapted for holding one or more wafers and a vertical rod around which the induction heating coils are disposed. A screw system and an insulator can further be used. This design helps prevent undesired levitation and allows for the gas injectors of the reactors to be placed closer to the wafer for deposition during high-temperature deposition processes at susceptor surface temperatures of about 1500°C or higher.
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