Bose, Riya; Adhikari, Aniruddha; Burlakov, Victor M; Liu, Guangyu; Haque, Mohammed; Priante, Davide; Hedhili, Mohamed N.; Wehbe, Nimer; Zhao, Chao; Yang, Haoze; Ng, Tien Khee; Goriely, Alain; Bakr, Osman; Wu, Tao; Ooi, Boon S.; Mohammed, Omar F.(ACS Energy Letters, American Chemical Society (ACS), 2018-01-30)[Article]
Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.
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