Labelle, André J.; Thon, Susanna; Masala, Silvia; Adachi, Michael M.; Dong, Haopeng; Farahani, Maryam; Ip, Alexander H.; Fratalocchi, Andrea; Sargent, E. H.(Nano Letters, American Chemical Society (ACS), 2015-02-11)[Article]
Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells that feature transfer-stamped solution-processed pyramid-shaped electrodes employed in a hierarchically structured device. The pyramids increase, by up to a factor of 2, the external quantum efficiency of the device at absorption-limited wavelengths near the absorber band edge. We show that absorption enhancement can be optimized with increased pyramid angle with an appreciable net improvement in power conversion efficiency, that is, with the gain in current associated with improved absorption and extraction overcoming the smaller fractional decrease in open-circuit voltage associated with increased junction area. We show that the hierarchical combination of micron-scale structured electrodes with nanoscale films provides for an optimized enhancement at absorption-limited wavelengths. We fabricate 54.7° pyramid-patterned electrodes, conformally apply the quantum dot films, and report pyramid CQD solar cells that exhibit a 24% improvement in overall short-circuit current density with champion devices providing a power conversion efficiency of 9.2%.
Dursun, Ibrahim; Shen, Chao; Parida, Manas R.; Pan, Jun; Sarmah, Smritakshi P.; Priante, Davide; AlYami, Noktan Mohammed; Liu, Jiakai; Saidaminov, Makhsud I.; Alias, Mohd Sharizal; Abdelhady, Ahmed L.; Ng, Tien Khee; Mohammed, Omar F.; Ooi, Boon S.; Bakr, Osman(ACS Photonics, American Chemical Society (ACS), 2016-05-31)[Article]
Visible light communication (VLC) is an emerging technology that uses light-emitting diodes (LEDs) or laser diodes for simultaneous illumination and data communication. This technology is envisioned to be a major part of the solution to the current bottlenecks in data and wireless communication. However, the conventional lighting phosphors that are typically integrated with LEDs have limited modulation bandwidth and thus cannot provide the bandwidth required to realize the potential of VLC. In this work, we present a promising light converter for VLC by designing solution-processed CsPbBr3 perovskite nanocrystals (NCs) with a conventional red phosphor. The fabricated CsPbBr3 NCs phosphor-based white light converter exhibits an unprecedented modulation bandwidth of 491 MHz, which is ~ 40 times greater than that of conventional phosphors, and the capability to transmit a high data rate of up to 2 Gbit/s. Moreover, this perovskite enhanced white light source combines ultrafast response characteristics with a high color rendering index of 89 and a low correlated color temperature of 3236 K, thereby enabling dual VLC and solid-state lighting functionalities.
Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer α-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk α-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d33 piezoelectric coefficient of α-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd-even effect. In addition, we also demonstrate a type of α-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in α-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain-tunable electronics/optoelectronics.
Bose, Riya; Adhikari, Aniruddha; Burlakov, Victor M; Liu, Guangyu; Haque, Mohammed; Priante, Davide; Hedhili, Mohamed N.; Wehbe, Nimer; Zhao, Chao; Yang, Haoze; Ng, Tien Khee; Goriely, Alain; Bakr, Osman; Wu, Tao; Ooi, Boon S.; Mohammed, Omar F.(ACS Energy Letters, American Chemical Society (ACS), 2018-01-23)[Article]
Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.
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