Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.
Export search results
The export option will allow you to export the current search results of the entered query to a file. Different
formats are available for download. To export the items, click on the button corresponding with the preferred download format.
By default, clicking on the export buttons will result in a download of the allowed maximum amount of items.
For anonymous users the allowed maximum amount is 50 search results.
To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export.
The amount of items that can be exported at once is similarly restricted as the full export.
After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.