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dc.contributor.authorZhang, Qian*
dc.contributor.authorMi, Wenbo*
dc.contributor.authorWang, Xiaocha*
dc.contributor.authorWang, Xuhui*
dc.date.accessioned2015-06-15T13:42:53Zen
dc.date.available2015-06-15T13:42:53Zen
dc.date.issued2015-05-27en
dc.identifier.citationSpin Polarization Inversion at Benzene-Absorbed Fe4N Surface 2015, 5:10602 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.pmid26012892en
dc.identifier.doi10.1038/srep10602en
dc.identifier.urihttp://hdl.handle.net/10754/556941en
dc.description.abstractWe report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.en
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep10602en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleSpin Polarization Inversion at Benzene-Absorbed Fe4N Surfaceen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division*
dc.identifier.journalScientific Reportsen
dc.identifier.pmcidPMC4445049en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China*
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China*
kaust.authorWang, Xuhui*
refterms.dateFOA2018-06-14T07:10:25Z


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