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dc.contributor.authorLi, Zirun
dc.contributor.authorMi, Wenbo
dc.contributor.authorWang, Xiaocha
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2015-06-10T11:45:39Z
dc.date.available2015-06-10T11:45:39Z
dc.date.issued2015-02-02
dc.identifier.citationInterfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers 2015:150209061453002 ACS Applied Materials & Interfaces
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/am509173r
dc.identifier.urihttp://hdl.handle.net/10754/556675
dc.description.abstractAnisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/am509173r
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am509173r.
dc.subjectfacing-target sputtering
dc.subjectFe4N
dc.subjectexchange bias
dc.subjectbilayer
dc.subjectanisotropic magnetoresistance
dc.titleInterfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPost-print
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
kaust.personZhang, Xixiang
refterms.dateFOA2016-02-02T00:00:00Z


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