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    Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

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    Type
    Article
    Authors
    Li, Zirun
    Mi, Wenbo
    Wang, Xiaocha
    Zhang, Xixiang cc
    KAUST Department
    Physical Sciences and Engineering (PSE) Division
    Date
    2015-02-02
    Permanent link to this record
    http://hdl.handle.net/10754/556675
    
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    Abstract
    Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.
    Citation
    Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers 2015:150209061453002 ACS Applied Materials & Interfaces
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    ISSN
    1944-8244
    1944-8252
    DOI
    10.1021/am509173r
    Additional Links
    http://pubs.acs.org/doi/abs/10.1021/am509173r
    ae974a485f413a2113503eed53cd6c53
    10.1021/am509173r
    Scopus Count
    Collections
    Articles; Physical Sciences and Engineering (PSE) Division

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