Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers
Type
ArticleKAUST Department
Physical Sciences and Engineering (PSE) DivisionDate
2015-02-02Permanent link to this record
http://hdl.handle.net/10754/556675
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Show full item recordAbstract
Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.Citation
Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers 2015:150209061453002 ACS Applied Materials & InterfacesPublisher
American Chemical Society (ACS)ISSN
1944-82441944-8252
Additional Links
http://pubs.acs.org/doi/abs/10.1021/am509173rae974a485f413a2113503eed53cd6c53
10.1021/am509173r