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dc.contributor.authorSun, Jingya
dc.contributor.authorYang, Yang
dc.contributor.authorKhan, Jafar I.
dc.contributor.authorAlarousu, Erkki
dc.contributor.authorGuo, Zaibing
dc.contributor.authorZhang, Xixiang
dc.contributor.authorZhang, Qiang
dc.contributor.authorMohammed, Omar F.
dc.date.accessioned2015-06-10T11:40:09Z
dc.date.available2015-06-10T11:40:09Z
dc.date.issued2014-06-23
dc.identifier.citationUltrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy 2014, 6 (13):10022 ACS Applied Materials & Interfaces
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid24918499
dc.identifier.doi10.1021/am5026159
dc.identifier.urihttp://hdl.handle.net/10754/556649
dc.description.abstractWe explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/am5026159
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am5026159.
dc.subjectultrafast carrier trapping
dc.subjecttitanium dioxide
dc.subjecttransient absorption spectroscopy
dc.subjectmetal-doped
dc.subjectdeep-level state
dc.titleUltrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Characterization
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPost-print
kaust.personYang, Yang
kaust.personGuo, Zaibing
kaust.personZhang, Xixiang
kaust.personZhang, Qiang
refterms.dateFOA2015-06-11T00:00:00Z
dc.date.published-online2014-06-23
dc.date.published-print2014-07-09


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