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dc.contributor.authorLin, Yen-Hung
dc.contributor.authorFaber, Hendrik
dc.contributor.authorLabram, John G.
dc.contributor.authorStratakis, Emmanuel
dc.contributor.authorSygellou, Labrini
dc.contributor.authorKymakis, Emmanuel
dc.contributor.authorHastas, Nikolaos A.
dc.contributor.authorLi, Ruipeng
dc.contributor.authorZhao, Kui
dc.contributor.authorAmassian, Aram
dc.contributor.authorTreat, Neil D.
dc.contributor.authorMcLachlan, Martyn
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2015-05-28T06:00:33Z
dc.date.available2015-05-28T06:00:33Z
dc.date.issued2015-05-26
dc.identifier.citationHigh Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices 2015:n/a Advanced Science
dc.identifier.issn21983844
dc.identifier.doi10.1002/advs.201500058
dc.identifier.urihttp://hdl.handle.net/10754/555958
dc.description.abstractHigh mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.
dc.publisherWiley
dc.relation.urlhttp://doi.wiley.com/10.1002/advs.201500058
dc.rightsThis is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. http://creativecommons.org/licenses/by/4.0/
dc.subjectenergy quantization
dc.subjectmetal oxides
dc.subjectsolution-processed materials
dc.subjectsuperlattices
dc.subjecttransistors
dc.subjecttransparent electronics
dc.titleHigh Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Science
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics; Blackett Laboratory; Imperial College London; London SW7 2AZ UK
dc.contributor.institutionInstitute of Electronic Structure and Laser (IESL); Foundation for Research and Technology-Hellas (FORTH); Heraklion 71003 Greece
dc.contributor.institutionInstitute of Chemical Engineering and High Temperature Processes (ICEHT); Foundation of Research and Technology Hellas (FORTH); Stadiou Strasse Platani; P.O. Box 1414 Patras GR-265 04 Greece
dc.contributor.institutionCenter of Materials Technology and Photonics and Electrical Engineering Department; Technological Educational Institute (TEI) of Crete; Heraklion 71004 Greece
dc.contributor.institutionPhysics Department; Aristotle University of Thessaloniki; Thessaloniki 54124 Greece
dc.contributor.institutionCornell High Energy Synchrotron Source; Wilson Laboratory; Cornell University; Ithaca NY 14853 USA
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics; Imperial College London; London Royal School of Mines; London SW7 2AZ UK
dc.contributor.institutionDutch Polymer Institute (DPI), AX, Eindhoven, The Netherlands
dc.contributor.institutionMaterials Science & Technology Department, University of Crete, Heraklion, Greece
kaust.personZhao, Kui
kaust.personAmassian, Aram
refterms.dateFOA2018-06-14T07:01:27Z
dc.date.published-online2015-05-26
dc.date.published-print2015-07


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