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dc.contributor.authorRoqan, Iman S.
dc.contributor.authorMumthaz Muhammed, Mufasila
dc.date.accessioned2015-05-27T13:47:53Z
dc.date.available2015-05-27T13:47:53Z
dc.date.issued2015-03-13
dc.identifier.citationRoqan, I. S., and M. M. Muhammed. "(-201) β-Gallium oxide substrate for high optical and structural quality GaN materials." In SPIE OPTO, pp. 93641K-93641K. International Society for Optics and Photonics, 2015.
dc.identifier.doi10.1117/12.2076475
dc.identifier.urihttp://hdl.handle.net/10754/555878
dc.description.abstract(-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.
dc.publisherSPIE-Intl Soc Optical Eng
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2076475
dc.rightsArchived with thanks to Proceedings of SPIE
dc.title(-201) β-Gallium oxide substrate for high quality GaN materials
dc.typeConference Paper
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalOxide-based Materials and Devices VI
dc.conference.date2015-02-08 to 2015-02-11
dc.conference.nameOxide-Based Materials and Devices VI
dc.conference.locationSan Francisco, CA, USA
dc.eprint.versionPublisher's Version/PDF
kaust.personRoqan, Iman S.
kaust.personMumthaz Muhammed, Mufasila
refterms.dateFOA2018-06-14T06:40:53Z


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