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dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorMure, S.
dc.contributor.authorMajhi, P.
dc.contributor.authorQuevedo-Lopez, M. A.
dc.date.accessioned2015-05-26T07:47:29Z
dc.date.available2015-05-26T07:47:29Z
dc.date.issued2011-01-03
dc.identifier.citationDepth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications 2011, 14 (3):H139 Electrochemical and Solid-State Letters
dc.identifier.issn10990062
dc.identifier.doi10.1149/1.3526141
dc.identifier.urihttp://hdl.handle.net/10754/555787
dc.description.abstractNanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.
dc.publisherThe Electrochemical Society
dc.relation.urlhttp://esl.ecsdl.org/cgi/doi/10.1149/1.3526141
dc.rightsArchived with thanks to Electrochemical and Solid-State Letters © 2011 ECS - The Electrochemical Society
dc.subjectbonds (chemical)
dc.subjectcarrier mobility
dc.subjectdielectric materials
dc.subjectelemental semiconductors
dc.subjecthafnium compounds
dc.subjectlanthanum compounds
dc.subjectnanoelectronics
dc.subjectnanostructured materials
dc.subjectRutherford backscattering
dc.subjectsemiconductor-insulator boundaries
dc.subjectsilicon
dc.titleDepth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalElectrochemical and Solid-State Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKobe Steel Ltd., Machinery and Engineering Company, Takasago 676-8670, Japan
dc.contributor.institutionINTEL Assignee to SEMATECH, Austin, Texas 78748, USA
dc.contributor.institutionMaterials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA
kaust.personAlshareef, Husam N.
refterms.dateFOA2018-06-14T06:39:34Z


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