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    Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

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    Type
    Article
    Authors
    Salas-Villasenor, A. L.
    Mejia, I.
    Hovarth, J.
    Alshareef, Husam N. cc
    Cha, Dong Kyu
    Ramirez-Bon, R.
    Gnade, B. E.
    Quevedo-Lopez, M. A.
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2010-07-12
    Online Publication Date
    2010-07-12
    Print Publication Date
    2010
    Permanent link to this record
    http://hdl.handle.net/10754/555786
    
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    Abstract
    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.
    Citation
    Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics 2010, 13 (9):H313 Electrochemical and Solid-State Letters
    Publisher
    The Electrochemical Society
    Journal
    Electrochemical and Solid-State Letters
    DOI
    10.1149/1.3456551
    Additional Links
    http://esl.ecsdl.org/cgi/doi/10.1149/1.3456551
    ae974a485f413a2113503eed53cd6c53
    10.1149/1.3456551
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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