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dc.contributor.authorManchon, Aurelien
dc.date.accessioned2015-05-25T14:44:20Z
dc.date.available2015-05-25T14:44:20Z
dc.date.issued2012-10-01
dc.identifier.citationManchon, A. "Manipulating the voltage dependence of tunneling spin torques." In SPIE NanoScience+ Engineering, pp. 84610S-84610S. International Society for Optics and Photonics, 2012
dc.identifier.doi10.1117/12.929484
dc.identifier.urihttp://hdl.handle.net/10754/555689
dc.description.abstractVoltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.
dc.publisherSPIE-Intl Soc Optical Eng
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.929484
dc.relation.urlhttp://arxiv.org/abs/1207.5231
dc.rightsArchived with thanks to Proceedings of SPIE
dc.titleManipulating the voltage dependence of tunneling spin torques
dc.typeConference Paper
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSpintronics Theory Group
dc.identifier.journalSpintronics V
dc.conference.date2012-08-12 to 2012-08-16
dc.conference.nameSpintronics V
dc.conference.locationSan Diego, CA, USA
dc.eprint.versionPublisher's Version/PDF
dc.identifier.arxividarXiv:1207.5231
kaust.personManchon, Aurelien
dc.versionv1
refterms.dateFOA2018-06-13T11:58:01Z
dc.date.posted2012-07-22


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