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dc.contributor.authorDong, Y.
dc.contributor.authorMooney, P. M.
dc.contributor.authorCai, F.
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorUr-Rehman, N.
dc.contributor.authorZhang, Xixiang
dc.contributor.authorXia, G. (Maggie)
dc.date.accessioned2015-05-25T08:39:36Z
dc.date.available2015-05-25T08:39:36Z
dc.date.issued2014-07-26
dc.identifier.citationExperiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures 2014, 3 (10):P302 ECS Journal of Solid State Science and Technology
dc.identifier.issn2162-8769
dc.identifier.issn2162-8777
dc.identifier.doi10.1149/2.0041410jss
dc.identifier.urihttp://hdl.handle.net/10754/555654
dc.description.abstractSi-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.
dc.publisherThe Electrochemical Society
dc.relation.urlhttp://jss.ecsdl.org/cgi/doi/10.1149/2.0041410jss
dc.rightsArchived with thanks to ECS Journal of Solid State Science and Technology © 2014 The Electrochemical Society
dc.titleExperiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalECS Journal of Solid State Science and Technology
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials Engineering, University of British Columbia, Vancouver, BC V6T1Z4, Canada
dc.contributor.institutionPhysics Department, Simon Fraser University, Burnaby, BC V5A 1S6, Canada
kaust.personAnjum, Dalaver H.
kaust.personZhang, Xixiang
kaust.personUr-Rehman, Naeem
refterms.dateFOA2018-06-14T06:39:25Z
dc.date.published-online2014-07-26
dc.date.published-print2014-07-26


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