Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures
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ECS J. Solid State Sci. Technol.-2014-Dong-P302-9.pdf
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ArticleKAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabElectron Microscopy
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-07-26Online Publication Date
2014-07-26Print Publication Date
2014-07-26Permanent link to this record
http://hdl.handle.net/10754/555654
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Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.Citation
Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures 2014, 3 (10):P302 ECS Journal of Solid State Science and TechnologyPublisher
The Electrochemical SocietyAdditional Links
http://jss.ecsdl.org/cgi/doi/10.1149/2.0041410jssae974a485f413a2113503eed53cd6c53
10.1149/2.0041410jss