• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguidePlumX LibguideSubmit an Item

    Statistics

    Display statistics

    Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    ECS J. Solid State Sci. Technol.-2014-Dong-P302-9.pdf
    Size:
    1.220Mb
    Format:
    PDF
    Description:
    Main article
    Download
    Type
    Article
    Authors
    Dong, Y.
    Mooney, P. M.
    Cai, F.
    Anjum, Dalaver H. cc
    Ur-Rehman, N.
    Zhang, Xixiang cc
    Xia, G. (Maggie)
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Electron Microscopy
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2014-07-26
    Online Publication Date
    2014-07-26
    Print Publication Date
    2014-07-26
    Permanent link to this record
    http://hdl.handle.net/10754/555654
    
    Metadata
    Show full item record
    Abstract
    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.
    Citation
    Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures 2014, 3 (10):P302 ECS Journal of Solid State Science and Technology
    Publisher
    The Electrochemical Society
    Journal
    ECS Journal of Solid State Science and Technology
    DOI
    10.1149/2.0041410jss
    Additional Links
    http://jss.ecsdl.org/cgi/doi/10.1149/2.0041410jss
    ae974a485f413a2113503eed53cd6c53
    10.1149/2.0041410jss
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

     
    DSpace software copyright © 2002-2021  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.