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dc.contributor.authorZhang, Yan
dc.contributor.authorMi, Wenbo
dc.contributor.authorWang, Xiaocha
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2015-05-21T07:13:36Z
dc.date.available2015-05-21T07:13:36Z
dc.date.issued2015
dc.identifier.citationScaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films 2015 Phys. Chem. Chem. Phys.
dc.identifier.issn1463-9076
dc.identifier.issn1463-9084
dc.identifier.doi10.1039/C5CP01955A
dc.identifier.urihttp://hdl.handle.net/10754/554391
dc.description.abstractAnomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/CP/C5CP01955A
dc.rightsArchived with thanks to Phys. Chem. Chem. Phys.
dc.titleScaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhys. Chem. Chem. Phys.
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communi cate Devices, School of Electronics Information Engineering, Tianjin Univer sity of Technology, Tianjin 300384, China
kaust.personZhang, Xixiang
refterms.dateFOA2016-05-13T00:00:00Z


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