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    Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films

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    C5CP01955A.pdf
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    Type
    Article
    Authors
    Zhang, Yan
    Mi, Wenbo
    Wang, Xiaocha
    Zhang, Xixiang cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2015
    Permanent link to this record
    http://hdl.handle.net/10754/554391
    
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    Abstract
    Anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.
    Citation
    Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films 2015 Phys. Chem. Chem. Phys.
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    Physical Chemistry Chemical Physics
    DOI
    10.1039/C5CP01955A
    Additional Links
    http://pubs.rsc.org/en/Content/ArticleLanding/2015/CP/C5CP01955A
    ae974a485f413a2113503eed53cd6c53
    10.1039/C5CP01955A
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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