Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/554391
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AbstractAnomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.
CitationScaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films 2015 Phys. Chem. Chem. Phys.
PublisherRoyal Society of Chemistry (RSC)
JournalPhys. Chem. Chem. Phys.