Fabrication and Characterization of Micro-membrane GaN Light Emitting Diodes
AdvisorsOoi, Boon S.
Embargo End Date2016-05-17
Permanent link to this recordhttp://hdl.handle.net/10754/554110
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Access RestrictionsAt the time of archiving, the student author of this thesis opted to temporarily restrict access to it. The full text of this thesis became available to the public after the expiration of the embargo on 2016-05-17.
AbstractDeveloping etching of GaN material system is the key to device fabrications. In this thesis, we report on the fabrication of high throughput lift-off of InGaN/GaN based micro-membrane light emitting diode (LED) from sapphire substrate using UV-assisted photoelectroless chemical (PEsC) etching. Unlike existing bandgap selective etching based on unconventional sacrificial layer, the current hydrofluoric acid based wet etching process enables the selective etching of undoped GaN layer already incorporated in standard commercial LED structures, thus attaining the leverage on high performance device design, and facile wet process technology. The lift-off micro-membrane LED showed 16% alleviated quantum efficiency droop under 200 mA/cm2 current injection, demonstrating the advantage of LED epitaxy exfoliation from the lattice-mismatched sapphire substrate. The origin of the performance improvement was investigated based on non-destructive characterization methods. Photoluminescence (PL) characterization showed a 7nm peak emission wavelength shift in the micro-membrane LED compared to the GaN-on-Sapphire LED. The Raman spectroscopy measurements correlate well with the PL observation that a 0.86 GPa relaxed compressive biaxial strain was achieved after the lift-off process. The micro-membrane LED technology enables further heterogeneous integration for forming pixelated red, green, blue (RGB) display on flexible and transparent substrate. The development of discrete and membrane LEDs using nano-fiber paper as the current spreading layer was also explored for such integration.