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dc.contributor.authorXu, W. J.
dc.contributor.authorZhang, Bei
dc.contributor.authorWang, Q. X.
dc.contributor.authorMi, W. B.
dc.contributor.authorWang, Z.
dc.contributor.authorLi, W.
dc.contributor.authorYu, R. H.
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2015-05-17T20:44:51Z
dc.date.available2015-05-17T20:44:51Z
dc.date.issued2011-05-20
dc.identifier.citationScaling of the anomalous Hall current in Fe100−x(SiO2)x films, 2011, 83 (20) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.83.205311
dc.identifier.urihttp://hdl.handle.net/10754/553021
dc.description.abstractTo study the origin of the anomalous Hall effect, Fe100−x(SiO2)x granular films with a volume fraction of SiO2 (0 ⩽ x ⩽ 40.51) were fabricated using cosputtering. Hall and longitudinal resistivities were measured in the temperature range of 5–350 K with magnetic fields up to 5 T. As x increased from 0 to 40.51, the anomalous Hall resistivity and longitudinal resistivity increased by about four and three orders in magnitude, respectively. Analysis of the results revealed that the normalized anomalous Hall conductivity is a constant for all of the samples, which may suggest a scattering-independent anomalous Hall conductivity in Fe.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.83.205311
dc.rightsArchived with thanks to Physical Review B
dc.titleScaling of the anomalous Hall current in Fe100−x(SiO2)x films
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Nanoscience and Technology, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong, China
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China
dc.contributor.institutionSchool of Materials Science and Engineering, Beihang University, Beijing 100191, China
kaust.personZhang, Bei
kaust.personWang, Qingxiao
kaust.personZhang, Xixiang
refterms.dateFOA2018-06-13T10:05:01Z


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