Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
MetadataShow full item record
AbstractSpin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.
CitationInterfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions 2011, 83 (17) Physical Review B
PublisherAmerican Physical Society (APS)
JournalPhysical Review B