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    Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

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    PhysRevB.84.085424.pdf
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    Description:
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    Type
    Article
    Authors
    Useinov, Arthur
    Kosel, Jürgen cc
    Useinov, N. Kh.
    Tagirov, L. R.
    KAUST Department
    Electrical Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensing, Magnetism and Microsystems Lab
    Date
    2011-08-24
    Permanent link to this record
    http://hdl.handle.net/10754/553010
    
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    Abstract
    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.
    Citation
    Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions 2011, 84 (8) Physical Review B
    Publisher
    American Physical Society (APS)
    Journal
    Physical Review B
    DOI
    10.1103/PhysRevB.84.085424
    Additional Links
    http://link.aps.org/doi/10.1103/PhysRevB.84.085424
    ae974a485f413a2113503eed53cd6c53
    10.1103/PhysRevB.84.085424
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab

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