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    Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

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    Type
    Article
    Authors
    Caraveo-Frescas, Jesus Alfonso
    Hedhili, Mohamed N. cc
    Wang, H.
    Schwingenschlögl, Udo cc
    Alshareef, Husam N. cc
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Computational Physics and Materials Science (CPMS)
    Functional Nanomaterials and Devices Research Group
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2012-03-10
    Online Publication Date
    2012-03-10
    Print Publication Date
    2012-03-05
    Permanent link to this record
    http://hdl.handle.net/10754/552880
    
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    Abstract
    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.
    Citation
    Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers 2012, 100 (10):102111 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.3692580
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/100/10/10.1063/1.3692580
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.3692580
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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