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dc.contributor.authorLi, Yongfeng
dc.contributor.authorDeng, Rui
dc.contributor.authorLin, Weinan
dc.contributor.authorTian, Yufeng
dc.contributor.authorPeng, Haiyang
dc.contributor.authorYi, Jiabao
dc.contributor.authorYao, Bin
dc.contributor.authorWu, Tao
dc.date.accessioned2015-05-14T12:19:52Z
dc.date.available2015-05-14T12:19:52Z
dc.date.issued2013-04-29
dc.identifier.citationElectrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide 2013, 87 (15) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.87.155151
dc.identifier.urihttp://hdl.handle.net/10754/552863
dc.description.abstractAs a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.87.155151
dc.rightsArchived with thanks to Physical Review B
dc.titleElectrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide
dc.typeArticle
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China
dc.contributor.institutionSchool of Materials Science & Engineering, The University of New South Wales, Sydney NSW 2052, Australia
dc.contributor.institutionState Key Lab of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
kaust.personWu, Tao
refterms.dateFOA2018-06-14T06:30:23Z


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