Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
Type
ArticleAuthors
Nayak, Pradipta K.Caraveo-Frescas, Jesus Alfonso
Bhansali, Unnat Sampatraj
Alshareef, Husam N.

KAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2012-06-23Online Publication Date
2012-06-23Print Publication Date
2012-06-18Permanent link to this record
http://hdl.handle.net/10754/552855
Metadata
Show full item recordAbstract
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.Citation
Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films 2012, 100 (25):253507 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4729787