Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
AuthorsNayak, Pradipta K.
Caraveo-Frescas, Jesus Alfonso
Bhansali, Unnat Sampatraj
Alshareef, Husam N.
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2012-06-23
Print Publication Date2012-06-18
Permanent link to this recordhttp://hdl.handle.net/10754/552855
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AbstractHigh performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.
CitationHomo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films 2012, 100 (25):253507 Applied Physics Letters
JournalApplied Physics Letters