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dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorWang, H.
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-05-14T12:57:07Z
dc.date.available2015-05-14T12:57:07Z
dc.date.issued2012-09-10
dc.identifier.citationExperimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers 2012, 101 (11):112902 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4747805
dc.identifier.urihttp://hdl.handle.net/10754/552852
dc.description.abstractThe impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/101/11/10.1063/1.4747805
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleExperimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personWang, Hao
kaust.personSchwingenschlögl, Udo
kaust.personAlshareef, Husam N.
refterms.dateFOA2018-06-14T07:39:20Z


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