Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers
KAUST DepartmentMaterials Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/552852
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AbstractThe impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
CitationExperimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers 2012, 101 (11):112902 Applied Physics Letters
JournalApplied Physics Letters