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dc.contributor.authorJahangir, Shafat
dc.contributor.authorDogan, Fatih
dc.contributor.authorKum, Hyun
dc.contributor.authorManchon, Aurelien
dc.contributor.authorBhattacharya, Pallab
dc.date.accessioned2015-05-14T12:48:55Z
dc.date.available2015-05-14T12:48:55Z
dc.date.issued2012-07-16
dc.identifier.citationSpin diffusion in bulk GaN measured with MnAs spin injector 2012, 86 (3) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.86.035315
dc.identifier.urihttp://hdl.handle.net/10754/552849
dc.description.abstractSpin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.86.035315
dc.rightsArchived with thanks to Physical Review B
dc.titleSpin diffusion in bulk GaN measured with MnAs spin injector
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA
kaust.personDogan, Fatih
kaust.personManchon, Aurelien
refterms.dateFOA2018-06-13T10:03:40Z


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