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dc.contributor.authorLourembam, James
dc.contributor.authorWu, Jianchun
dc.contributor.authorDing, Junfeng
dc.contributor.authorLin, Weinan
dc.contributor.authorWu, Tao
dc.date.accessioned2015-05-14T08:45:46Z
dc.date.available2015-05-14T08:45:46Z
dc.date.issued2014-01-29
dc.identifier.citationElectric field tuning of phase separation in manganite thin films 2014, 89 (1) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.89.014425
dc.identifier.urihttp://hdl.handle.net/10754/552832
dc.description.abstractIn this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.89.014425
dc.rightsArchived with thanks to Physical Review B
dc.titleElectric field tuning of phase separation in manganite thin films
dc.typeArticle
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
dc.contributor.institutionKey Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
kaust.personDing, Junfeng
kaust.personWu, Tao
refterms.dateFOA2018-06-14T06:29:31Z


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