Electric field tuning of phase separation in manganite thin films
Type
ArticleKAUST Department
Laboratory of Nano Oxides for Sustainable EnergyMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-01-29Permanent link to this record
http://hdl.handle.net/10754/552832
Metadata
Show full item recordAbstract
In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.Citation
Electric field tuning of phase separation in manganite thin films 2014, 89 (1) Physical Review BPublisher
American Physical Society (APS)Journal
Physical Review BAdditional Links
http://link.aps.org/doi/10.1103/PhysRevB.89.014425ae974a485f413a2113503eed53cd6c53
10.1103/PhysRevB.89.014425