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dc.contributor.authorCheng, Yingchun
dc.contributor.authorKaloni, Thaneshwor P.
dc.contributor.authorHuang, G. S.
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-05-14T08:39:15Z
dc.date.available2015-05-14T08:39:15Z
dc.date.issued2011-08-04
dc.identifier.citationOrigin of the high p-doping in F intercalated graphene on SiC 2011, 99 (5):053117 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3623484
dc.identifier.urihttp://hdl.handle.net/10754/552825
dc.description.abstractThe atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/5/10.1063/1.3623484
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleOrigin of the high p-doping in F intercalated graphene on SiC
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials Science, Fudan University, 220 Handan Road, Shanghai 200433, People’s Republic of China
kaust.personCheng, Yingchun
kaust.personKaloni, Thaneshwor P.
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T06:15:20Z
dc.date.published-online2011-08-04
dc.date.published-print2011-08


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