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dc.contributor.authorWu, X.
dc.contributor.authorFang, Z.
dc.contributor.authorLi, Kun
dc.contributor.authorBosman, M.
dc.contributor.authorRaghavan, N.
dc.contributor.authorLi, X.
dc.contributor.authorYu, H. Y.
dc.contributor.authorSingh, N.
dc.contributor.authorLo, G. Q.
dc.contributor.authorZhang, Xixiang
dc.contributor.authorPey, K. L.
dc.date.accessioned2015-05-14T08:36:46Z
dc.date.available2015-05-14T08:36:46Z
dc.date.issued2011-09-29
dc.identifier.citationChemical insight into origin of forming-free resistive random-access memory devices 2011, 99 (13):133504 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3645623
dc.identifier.urihttp://hdl.handle.net/10754/552822
dc.description.abstractWe demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/13/10.1063/1.3645623
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleChemical insight into origin of forming-free resistive random-access memory devices
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore 117602, Singapore
dc.contributor.institutionSingapore University of Technology and Design, Singapore 138682, Singapore
dc.contributor.institutionInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685, Singapore
dc.contributor.institutionDivision of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
kaust.personLi, Kun
kaust.personZhang, Xixiang
refterms.dateFOA2018-06-14T06:26:33Z
dc.date.published-online2011-09-29
dc.date.published-print2011-09-26


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