• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguidePlumX LibguideSubmit an Item

    Statistics

    Display statistics

    Chemical insight into origin of forming-free resistive random-access memory devices

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    1.3645623.pdf
    Size:
    1.110Mb
    Format:
    PDF
    Description:
    Main article
    Download
    Type
    Article
    Authors
    Wu, X.
    Fang, Z.
    Li, Kun
    Bosman, M.
    Raghavan, N.
    Li, X.
    Yu, H. Y.
    Singh, N.
    Lo, G. Q.
    Zhang, Xixiang cc
    Pey, K. L.
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2011-09-29
    Online Publication Date
    2011-09-29
    Print Publication Date
    2011-09-26
    Permanent link to this record
    http://hdl.handle.net/10754/552822
    
    Metadata
    Show full item record
    Abstract
    We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.
    Citation
    Chemical insight into origin of forming-free resistive random-access memory devices 2011, 99 (13):133504 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.3645623
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/99/13/10.1063/1.3645623
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.3645623
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

     
    DSpace software copyright © 2002-2021  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.