Chemical insight into origin of forming-free resistive random-access memory devices
Type
ArticleAuthors
Wu, X.Fang, Z.
Li, Kun
Bosman, M.
Raghavan, N.
Li, X.
Yu, H. Y.
Singh, N.
Lo, G. Q.
Zhang, Xixiang

Pey, K. L.
KAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabImaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2011-09-29Online Publication Date
2011-09-29Print Publication Date
2011-09-26Permanent link to this record
http://hdl.handle.net/10754/552822
Metadata
Show full item recordAbstract
We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.Citation
Chemical insight into origin of forming-free resistive random-access memory devices 2011, 99 (13):133504 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.3645623