Chemical insight into origin of forming-free resistive random-access memory devices
Yu, H. Y.
Lo, G. Q.
Pey, K. L.
KAUST DepartmentImaging and Characterization Core Lab
Materials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Advanced Nanofabrication, Imaging and Characterization Core Lab
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AbstractWe demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.
CitationChemical insight into origin of forming-free resistive random-access memory devices 2011, 99 (13):133504 Applied Physics Letters
JournalApplied Physics Letters