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dc.contributor.authorCheng, Yingchun
dc.contributor.authorZhang, Qingyun
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-05-14T08:26:57Z
dc.date.available2015-05-14T08:26:57Z
dc.date.issued2014-04-28
dc.identifier.citationValley polarization in magnetically doped single-layer transition-metal dichalcogenides 2014, 89 (15) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.89.155429
dc.identifier.urihttp://hdl.handle.net/10754/552792
dc.description.abstractWe demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.89.155429
dc.rightsArchived with thanks to Physical Review B
dc.titleValley polarization in magnetically doped single-layer transition-metal dichalcogenides
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
kaust.personCheng, Yingchun
kaust.personZhang, Qingyun
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-13T09:39:41Z


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