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dc.contributor.authorHinkle, C. L.
dc.contributor.authorGalatage, R. V.
dc.contributor.authorChapman, R. A.
dc.contributor.authorVogel, E. M.
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorFreeman, C.
dc.contributor.authorChristensen, M.
dc.contributor.authorWimmer, E.
dc.contributor.authorNiimi, H.
dc.contributor.authorLi-Fatou, A.
dc.contributor.authorShaw, J. B.
dc.contributor.authorChambers, J. J.
dc.date.accessioned2015-05-14T08:26:27Z
dc.date.available2015-05-14T08:26:27Z
dc.date.issued2012-04-09
dc.identifier.citationGate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition 2012, 100 (15):153501 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3701165
dc.identifier.urihttp://hdl.handle.net/10754/552791
dc.description.abstractSilicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/15/10.1063/1.3701165
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleGate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
dc.contributor.institutionAdvanced CMOS, Texas Instruments, Incorporated, Dallas, Texas 75243, USA
dc.contributor.institutionMaterials Design, Incorporated, Angel Fire, New Mexico 87710, USA
kaust.personAlshareef, Husam N.
refterms.dateFOA2018-06-14T07:39:01Z


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