Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
dc.contributor.author | Hinkle, C. L. | |
dc.contributor.author | Galatage, R. V. | |
dc.contributor.author | Chapman, R. A. | |
dc.contributor.author | Vogel, E. M. | |
dc.contributor.author | Alshareef, Husam N. | |
dc.contributor.author | Freeman, C. | |
dc.contributor.author | Christensen, M. | |
dc.contributor.author | Wimmer, E. | |
dc.contributor.author | Niimi, H. | |
dc.contributor.author | Li-Fatou, A. | |
dc.contributor.author | Shaw, J. B. | |
dc.contributor.author | Chambers, J. J. | |
dc.date.accessioned | 2015-05-14T08:26:27Z | |
dc.date.available | 2015-05-14T08:26:27Z | |
dc.date.issued | 2012-04-09 | |
dc.identifier.citation | Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition 2012, 100 (15):153501 Applied Physics Letters | |
dc.identifier.issn | 00036951 | |
dc.identifier.doi | 10.1063/1.3701165 | |
dc.identifier.uri | http://hdl.handle.net/10754/552791 | |
dc.description.abstract | Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt. | |
dc.publisher | AIP Publishing | |
dc.relation.url | http://scitation.aip.org/content/aip/journal/apl/100/15/10.1063/1.3701165 | |
dc.rights | Archived with thanks to Applied Physics Letters | |
dc.title | Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition | |
dc.type | Article | |
dc.contributor.department | Functional Nanomaterials and Devices Research Group | |
dc.contributor.department | Material Science and Engineering Program | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | Applied Physics Letters | |
dc.eprint.version | Publisher's Version/PDF | |
dc.contributor.institution | Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA | |
dc.contributor.institution | Advanced CMOS, Texas Instruments, Incorporated, Dallas, Texas 75243, USA | |
dc.contributor.institution | Materials Design, Incorporated, Angel Fire, New Mexico 87710, USA | |
kaust.person | Alshareef, Husam N. | |
refterms.dateFOA | 2018-06-14T07:39:01Z |
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