Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
AuthorsHinkle, C. L.
Galatage, R. V.
Chapman, R. A.
Vogel, E. M.
Alshareef, Husam N.
Shaw, J. B.
Chambers, J. J.
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/552791
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AbstractSilicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.
CitationGate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition 2012, 100 (15):153501 Applied Physics Letters
JournalApplied Physics Letters