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    Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

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    Type
    Article
    Authors
    Hinkle, C. L.
    Galatage, R. V.
    Chapman, R. A.
    Vogel, E. M.
    Alshareef, Husam N. cc
    Freeman, C.
    Christensen, M.
    Wimmer, E.
    Niimi, H.
    Li-Fatou, A.
    Shaw, J. B.
    Chambers, J. J.
    KAUST Department
    Physical Sciences and Engineering (PSE) Division
    Date
    2012-04-09
    Permanent link to this record
    http://hdl.handle.net/10754/552791
    
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    Abstract
    Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.
    Citation
    Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition 2012, 100 (15):153501 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    ISSN
    00036951
    DOI
    10.1063/1.3701165
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/100/15/10.1063/1.3701165
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.3701165
    Scopus Count
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    Articles; Physical Sciences and Engineering (PSE) Division

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