Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
Type
ArticleAuthors
Hinkle, C. L.Galatage, R. V.
Chapman, R. A.
Vogel, E. M.
Alshareef, Husam N.

Freeman, C.
Christensen, M.
Wimmer, E.
Niimi, H.
Li-Fatou, A.
Shaw, J. B.
Chambers, J. J.
KAUST Department
Physical Sciences and Engineering (PSE) DivisionDate
2012-04-09Permanent link to this record
http://hdl.handle.net/10754/552791
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Show full item recordAbstract
Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al diffusion from the cladding to the TiN/HfO2interface during forming gas anneal together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with experimentally detected N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.Citation
Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition 2012, 100 (15):153501 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics LettersISSN
00036951ae974a485f413a2113503eed53cd6c53
10.1063/1.3701165