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dc.contributor.authorWu, Xing
dc.contributor.authorLi, Kun
dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorBosman, Michel
dc.contributor.authorWang, Qingxiao
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorZhang, Xixiang
dc.contributor.authorPey, Kin-Leong
dc.date.accessioned2015-05-14T07:17:48Z
dc.date.available2015-05-14T07:17:48Z
dc.date.issued2011-08-29
dc.identifier.citationUncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory 2011, 99 (9):093502 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3624597
dc.identifier.urihttp://hdl.handle.net/10754/552786
dc.description.abstractResistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/9/10.1063/1.3624597
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleUncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDivision of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
dc.contributor.institutionInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore
dc.contributor.institutionEngineering Product Development Pillar, Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682, Singapore
kaust.personLi, Kun
kaust.personWang, Qingxiao
kaust.personCha, Dong Kyu
kaust.personZhang, Xixiang
refterms.dateFOA2018-06-14T07:38:57Z


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