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    Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

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    Type
    Article
    Authors
    Wu, Xing
    Li, Kun
    Raghavan, Nagarajan
    Bosman, Michel cc
    Wang, Qingxiao
    Cha, Dong Kyu
    Zhang, Xixiang cc
    Pey, Kin-Leong
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2011-08-29
    Permanent link to this record
    http://hdl.handle.net/10754/552786
    
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    Abstract
    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.
    Citation
    Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory 2011, 99 (9):093502 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.3624597
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/99/9/10.1063/1.3624597
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.3624597
    Scopus Count
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    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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