Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
Type
ArticleAuthors
Wu, XingLi, Kun
Raghavan, Nagarajan
Bosman, Michel

Wang, Qingxiao
Cha, Dong Kyu
Zhang, Xixiang

Pey, Kin-Leong
KAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabImaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2011-08-29Permanent link to this record
http://hdl.handle.net/10754/552786
Metadata
Show full item recordAbstract
Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.Citation
Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory 2011, 99 (9):093502 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.3624597