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dc.contributor.authorLorenz, K.
dc.contributor.authorAlves, E.
dc.contributor.authorRoqan, Iman S.
dc.contributor.authorO’Donnell, K. P.
dc.contributor.authorNishikawa, A.
dc.contributor.authorFujiwara, Y.
dc.contributor.authorBoćkowski, M.
dc.date.accessioned2015-05-14T06:38:38Z
dc.date.available2015-05-14T06:38:38Z
dc.date.issued2010-09-16
dc.identifier.citationLattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy 2010, 97 (11):111911 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3489103
dc.identifier.urihttp://hdl.handle.net/10754/552765
dc.description.abstractEu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/97/11/10.1063/1.3489103
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleLattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
dc.contributor.institutionDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, Scotland, United Kingdom
dc.contributor.institutionInstituto Tecnológico Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal and CFNUL, Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal
kaust.personRoqan, Iman S.
refterms.dateFOA2018-06-14T07:41:39Z


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