Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
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AbstractEu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.
CitationLattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy 2010, 97 (11):111911 Applied Physics Letters
JournalApplied Physics Letters