Show simple item record

dc.contributor.authorZhang, Yan
dc.contributor.authorMi, Wenbo
dc.contributor.authorWang, Xiaocha
dc.contributor.authorGuo, Zaibing
dc.date.accessioned2015-05-14T07:08:43Z
dc.date.available2015-05-14T07:08:43Z
dc.date.issued2015-05-08
dc.identifier.citationScaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction 2015 Solid State Communications
dc.identifier.issn00381098
dc.identifier.doi10.1016/j.ssc.2015.05.001
dc.identifier.urihttp://hdl.handle.net/10754/552758
dc.description.abstractScaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.
dc.publisherElsevier BV
dc.relation.urlhttp://linkinghub.elsevier.com/retrieve/pii/S0038109815001623
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Solid State Communications. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solid State Communications, 8 May 2015. DOI: 10.1016/j.ssc.2015.05.001
dc.subjectCoFeB
dc.subjectAnomalous Hall effect
dc.subjectElectron localization
dc.subjectUltrathin films
dc.titleScaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Lab
dc.identifier.journalSolid State Communications
dc.eprint.versionPost-print
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communi cate Devices, School of Electronics Information Engineering, Tianjin Univer sity of Technology, Tianjin
kaust.personGuo, Zaibing
refterms.dateFOA2017-05-08T00:00:00Z


Files in this item

Thumbnail
Name:
1-s2.0-S0038109815001623-main.pdf
Size:
1.180Mb
Format:
PDF
Description:
Accepted Manuscript

This item appears in the following Collection(s)

Show simple item record