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    Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction

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    1-s2.0-S0038109815001623-main.pdf
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    1.180Mb
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    Description:
    Accepted Manuscript
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    Type
    Article
    Authors
    Zhang, Yan
    Mi, Wenbo
    Wang, Xiaocha
    Guo, Zaibing
    KAUST Department
    Nanofabrication Core Lab
    Date
    2015-05-08
    Online Publication Date
    2015-05-08
    Print Publication Date
    2015-07
    Permanent link to this record
    http://hdl.handle.net/10754/552758
    
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    Abstract
    Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.
    Citation
    Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction 2015 Solid State Communications
    Publisher
    Elsevier BV
    Journal
    Solid State Communications
    DOI
    10.1016/j.ssc.2015.05.001
    Additional Links
    http://linkinghub.elsevier.com/retrieve/pii/S0038109815001623
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.ssc.2015.05.001
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab

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