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dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorCha, Dong Kyu
dc.date.accessioned2015-05-14T06:33:20Z
dc.date.available2015-05-14T06:33:20Z
dc.date.issued2010-11-22
dc.identifier.citationNanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics 2010, 97 (20):202108 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3519363
dc.identifier.urihttp://hdl.handle.net/10754/552742
dc.description.abstractMetal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/97/20/10.1063/1.3519363
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleNanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personAlshareef, Husam N.
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personCha, Dong Kyu
refterms.dateFOA2018-06-13T11:19:48Z
dc.date.published-online2010-11-22
dc.date.published-print2010-11-15


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