Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics
Type
ArticleKAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabFunctional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2010-11-22Online Publication Date
2010-11-22Print Publication Date
2010-11-15Permanent link to this record
http://hdl.handle.net/10754/552742
Metadata
Show full item recordAbstract
Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.Citation
Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics 2010, 97 (20):202108 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.3519363